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Ald Revolutionizes Analog Design With Low Threshold Nanopower™ Mosfets

Breakthrough in design supports nanowatt-power circuit operation and enables new level of precision in circuit design
SUNNYVALE, Calif. - September 13, 2005 - Advanced Linear Devices Inc (ALD), the design innovation leader in analog semiconductors, today announces a family of ultra-precise enhancement mode MOSFET arrays that will allow designers a new level of accuracy in controlling gate threshold and sub threshold voltage characteristics in circuits for the first time. With extremely low gate threshold characteristics, these unique devices have been created to enable Nanopower™ circuit designs, achieving yet another industry breakthrough.

As the era of ultra-low power design evolves into a new era of nanopower challenges, analog designers seek a new set of tools to make their tasks more exacting in order to avert some of the limitations of commonly used semiconductor devices. The Quad/Dual N-Channel Matched Pair Enhancement Mode MOSFET arrays, matched at the factory using ALD's EPAD® CMOS technology, provide these tools as they achieve the industry-first milestone threshold voltage of +0.20V.

This low threshold of +0.20V and the precision tolerances of +/- 0.02V and +/- 10 mV offset provide designers the ability to design circuits that operate on mere nanowatts of power. Along with very tight tolerances, the extremely low threshold voltage of EPAD enhancement mode MOSFETs support the operation of countless applications ranging across myriad industries such as instrumentation, military, aerospace, industrial controls and medical to name a few.

With the ability to operate at one-tenth the power supply voltage of competitive devices, these devices can be used to build a variety of analog circuits with extremely low supply or bias voltage levels such as an amplifier operating at 0.20V.

"Nanopower operation, or circuits that operate on less than a microwatt, has been an elusive goal for the electronics industry ," said John Skurla, Marketing Director of ALD "ALD is now offering that possibility with the Ultra-Low Power Enhancement Mode EPAD MOSFET arrays which enable the operation of delicate sensors from remote locations for sensitive and critical security applications. Even portable medical devices that are counted on for long operational life can benefit by circuitry with precisely controlled voltages. The world is demanding lower voltage operation from a variety of electronic devices and these highly precise Nanopower EPAD MOSFETs will help enable the industry to achieve this goal."

The extremely low threshold voltages and precise tolerance range of the EPAD MOSFETs are made possible through ALD's patented EPAD® technology, which allows these devices to be electrically trimmed at the factory for these extraordinary specifications for the first time. This family of devices will play an important role in many specific analog circuits such as current sources, current mirrors, discrete differential amplifiers and analog multiplexers, just to name a few.

Technical Specifications
The New Devices are designated "Quad/Dual N-Channel Enhancement Mode EPAD Matched Pair MOSFET Arrays". The specific part numbers are ALD110802/ALD110902, ALD110808/ALD110908 and the ALD110814 /ALD110814. They are available as quad and dual devices in PDIP and SOIC packages in four different models for each version. They feature, as the most salient specification, a gate threshold voltage of +0.20V +/- 0.02V@1uA, +0.80V +/- 0.02V@1uA, and +1.40V+/-0.04V respectively. In addition, the ALD110808 devices are also available in an "A grade" version named ALD110808A/ALD110908A, with a gate threshold voltage specification of +0.80V+/-0.01V@1uA.

The New Enhancement Mode EPAD MOSFETs are now available from stock in both sample and production quantities. Pricing starts at $0.67 in quantities of 100 and are available at Mouser Electronics (

About EPAD Technology
The EPAD Ultra-Low Voltage MOSFET and Zero Threshold MOSFET devices were developed using ALD's patented EPAD® CMOS technology. EPAD is an acronym for Electrically Programmable Analog Device - a patented and trademarked technology developed by ALD to precisely trim a variety of CMOS analog integrated circuit elements. EPAD is a proven design and manufacturing technology, conceived by ALD and steadily improved over many years of implementation.. Once trimmed, the device voltage and current characteristics are stored indefinitely in the chip even when the power to the chip is removed. Programming or trimming is achieved through a series of software controlled injected voltage charge packets to a floating gate structure.

About Advanced Linear Devices, Inc. Advanced Linear Devices, Inc. (ALD) is a design innovation leader in analog semiconductors specializing in the development and manufacture of precision CMOS linear integrated circuits, including analog switches, A/D converters and chipsets, voltage comparators, operational amplifiers, analog timers, and conventional and EPAD MOSFET transistors. Most standard functions are also available as Function Specific ASIC cells for the development of customized Application Specific integrated circuits (ASIC). ALD was founded in 1985 with a commitment to bridge the technology gaps by providing analog semiconductor solutions to the challenges facing OEM design engineers in the industrial controls, military, automotive, security, and medical instrumentation markets. ALD is headquartered in Sunnyvale, Calif., with distributors throughout the U.S. and Europe.

Company Contact:
John P. Skurla, Director of Marketing & Sales, Advanced Linear Devices, Inc., 415 Tasman Drive, Sunnyvale, CA 94089 USA. Telephone: 408-747-1155; Fax: 408-747-1286; E-mail:
Download Data Sheet ALD110802
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