Part No.
 |
Description |
Feat-ures |
Package Type |
Thres- hold Voltage (Default)
(V) |
Thres- hold Voltage (Max)(V) |
Offset Voltage (Max)
(mV) |
Drain On Current (Typ)
(mA) |
Drain
Source On Resistance (Max)
(Ohm) |
Drain
Source On Resistance Match
(typ)
(%) |
Gate
Input Leakage Current (Max)
(pA) |
Drain
Source Leakage
Current
(Max)
(pA) |
Drain Source Break-
down
Voltage
(Min)(V) |
| ALD1108EPC |
Quad EPAD MOSFET |
Quad as Dual N-channel Pair, common source |
DIP-16 |
1 |
3 |
5 |
3 |
500 |
0.5 |
100 |
400 |
10 |
| ALD1108ESC |
Quad EPAD MOSFET |
Quad as Dual N-channel Pair, common source |
SO-16 |
1 |
3 |
5 |
3 |
500 |
0.5 |
100 |
400 |
10 |
| ALD1110EPA |
Dual EPAD MOSFET |
N-channel Pair, common source |
DIP-8 |
1 |
3 |
5 |
3 |
500 |
0.5 |
100 |
400 |
10 |
| ALD1110ESA |
Dual EPAD MOSFET |
N-channel Pair, common source |
SO-8 |
1 |
3 |
5 |
3 |
500 |
0.5 |
100 |
400 |
10 |
| ALD1121EPA |
Quad EPAD MOSFET |
Dual N-channel , seperate source |
DIP-8 |
1 |
3 |
5 |
3 |
500 |
0.5 |
100 |
400 |
10 |
| ALD1121ESA |
Quad EPAD MOSFET |
Dual N-channel seperate source |
SO-8 |
1 |
3 |
5 |
3 |
500 |
0.5 |
100 |
400 |
10 |
| ALD1123EPC |
Quad EPAD MOSFET |
Quad N-channel, seperate source |
DIP-16 |
1 |
3 |
5 |
3 |
500 |
0.5 |
100 |
400 |
10 |
| ALD1123ESC |
Quad EPAD MOSFET |
Quad N-channel, seperate source |
SO-16 |
1 |
3 |
5 |
3 |
500 |
0.5 |
100 |
400 |
10 |
